http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20070021309-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32139 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28123 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate | 2005-07-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2007-02-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20070021309-A |
| titleOfInvention | Manufacturing Method of Semiconductor Device |
| abstract | After the polycrystalline silicon film 5 is formed (step S1) on the semiconductor substrate through the switching film for the gate insulating film (step S1), an organic antireflection film 21 is formed on the polycrystalline silicon film 5 (step S2), The resist pattern 22 is formed on the antireflection film 21 (step S3). Then, the protective film 23 is deposited on the anti-reflection film 21 so as to cover the resist pattern 22 by plasma using a flow carbon-based gas while applying a bias voltage to the semiconductor substrate (step S4). Then, the protective film 23 and the antireflection film 21 are etched by plasma using a gas containing oxygen gas (step S5). Thereafter, the polycrystalline silicon film 5 is etched using the resist pattern 22 with reduced edge roughness as an etching mask to form a gate electrode (step S6).n n n n Polycrystalline silicon film, antireflection film, resist pattern, protective film, semiconductor substrate, gate electrode, insulating film, contact hole, silicide film, plug, barrier film, wiring layer, |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9520289-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100914820-B1 |
| priorityDate | 2004-09-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 35.