http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20070017029-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76237 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14689 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14643 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1463 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-146 |
| filingDate | 2006-08-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2007-02-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20070017029-A |
| titleOfInvention | Method of manufacturing the CMOS image sensor and the CMOS image sensor |
| abstract | The present invention relates, in particular, to a CMOS image sensor with high sensitivity and low interference at far infrared wavelengths, and to a method of manufacturing the image sensor. The CMOS image sensor includes a substrate, an epitaxial layer on the substrate, and a plurality of pixels extending into the epitaxial layer for receiving light. The image sensor may also be adapted to prevent carriers generated within the substrate from moving to the epitaxial layer, at least one horizontal barrier layer between the substrate and the epitaxial layer, and to prevent lateral divergence of electrons in the epitaxial layer, It includes a plurality of transverse barrier layers between adjacent multiple pixels. |
| priorityDate | 2005-08-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 36.