http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20060110225-A

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7af673589ca45d2fd8b9ea902cdbd1dc
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66068
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823487
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
filingDate 2006-04-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_42f6c79a0d03aa65ae9c462a1b84a33e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d7d57a3a2c98e2087f232bd2130cf73d
publicationDate 2006-10-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20060110225-A
titleOfInvention Silicon carbide semiconductor device
abstract The silicon carbide semiconductor device includes a semiconductor element disposed on the semiconductor substrates 1 to 3 having the first conductivity type silicon carbide layers 2 and 3 and the silicon substrate 1. The semiconductor device is disposed on the surfaces of the silicon carbide layers 2 and 3, and has trenches that reach the silicon substrate 1 and trenches at the boundary between the silicon carbide layers 2 and 3 and the silicon substrate 1 ( It is disposed within 10) and includes a conductor layer 11 connected to both the silicon carbide layers 2 and 3 and the silicon substrate 1. The semiconductor element becomes a vertical semiconductor element in order for a current to flow both the front and back of the semiconductor substrates 1-3. Current flows through the conductor layer.
priorityDate 2005-04-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID23963
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559477
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5461123
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID9863
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559541
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419549006

Total number of triples: 22.