http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20060110225-A
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7af673589ca45d2fd8b9ea902cdbd1dc |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66068 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8213 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823487 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
filingDate | 2006-04-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_42f6c79a0d03aa65ae9c462a1b84a33e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d7d57a3a2c98e2087f232bd2130cf73d |
publicationDate | 2006-10-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | KR-20060110225-A |
titleOfInvention | Silicon carbide semiconductor device |
abstract | The silicon carbide semiconductor device includes a semiconductor element disposed on the semiconductor substrates 1 to 3 having the first conductivity type silicon carbide layers 2 and 3 and the silicon substrate 1. The semiconductor device is disposed on the surfaces of the silicon carbide layers 2 and 3, and has trenches that reach the silicon substrate 1 and trenches at the boundary between the silicon carbide layers 2 and 3 and the silicon substrate 1 ( It is disposed within 10) and includes a conductor layer 11 connected to both the silicon carbide layers 2 and 3 and the silicon substrate 1. The semiconductor element becomes a vertical semiconductor element in order for a current to flow both the front and back of the semiconductor substrates 1-3. Current flows through the conductor layer. |
priorityDate | 2005-04-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 22.