http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20060102043-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b31896b0595e5629c470c80b74b2d2e4 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-452 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A47G9-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4551 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45536 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45544 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate | 2005-03-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1c873af8ace87d3b00c03545efc6c8ff http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ddaf712e0dd45d10be0e0db22a59de66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6353ec335cac07b2c1e44deaf69e5137 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_de5d3672b651f20780567bd4ef9643a9 |
| publicationDate | 2006-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20060102043-A |
| titleOfInvention | Atomic Layer Deposition Apparatus Using Neutral Beam and Atomic Layer Deposition Method Using Apparatus |
| abstract | The present invention relates to a neutral beam deposition apparatus and an atomic layer deposition method using the apparatus, and more particularly, a flux of radicals generated by plasmalizing a second reaction gas, that is, an ion beam, to be irradiated onto a substrate to be processed. An atomic layer deposition apparatus using a neutral beam and an atomic layer deposition method using the apparatus. In addition, the present invention by supplying a first reaction gas containing a material that is not chemically adsorbed on the substrate to be processed into the reaction chamber loaded with the substrate, the first reactant adsorption layer containing a material that is not chemically adsorbed Chemically adsorbing on the substrate and irradiating the neutral beam generated by the second reaction gas onto the substrate on which the first reactant adsorption layer is formed, thereby chemically adsorbing on the substrate. And removing the material from the first reactant adsorption layer to form a second reactant adsorption layer.n n n In the atomic layer deposition process, a second reaction gas is injected to cause a reaction at a high temperature, or a flux in which the second reaction gas is converted into plasma is used. It may occur according to the plasma, and when the second reaction gas is injected as it is, there is a problem that the second reaction gas process of the ALD process is made at a high temperature. In addition, to overcome the problem of charging, a method using a remote plasma (remote plasma) has been disclosed, but when using a remote plasma has a problem that the flux and energy is reduced. Accordingly, the present invention was invented to solve the above problems, and was intended to neutralize the second reaction gas. In this case, the neutral beam is generated by reflecting ions having energy to the reflector or by recombination or charge exchange. When the present invention is applied, the process can be performed at low temperature without damaging the charging, and accordingly, not only the deposition of monolayer materials such as Si and SiO 2 , but also the deep-trench dielectrics and gate dielectric films of DRAM Of course, it can be applied to the deposition process of the semiconductor region including the wiring region (diffusion barrier, seed layer) and the like.n n n n Neutral Beam, Grid, Reflector, Ion Beam, Incidence Angle, Deposition, ALD, Atomic Layer Deposition |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101530445-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109518166-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109518166-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20210151456-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2016056862-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10229834-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101364364-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20160042828-A |
| priorityDate | 2005-03-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 54.