http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20060090827-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c186e9ae8cafab5df5c8d80cfa7b0fa1 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02019 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-306 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30612 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-20 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 |
| filingDate | 2004-08-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_059871249fb9c02c631b4ad60ce3ecce http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_17f8758615fce5044768fa12c8fb2793 |
| publicationDate | 2006-08-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20060090827-A |
| titleOfInvention | Method for manufacturing gallium nitride based semiconductor substrate and gallium nitride based semiconductor substrate |
| abstract | Polishing the nitride semiconductor single crystal wafer produces a processed deteriorated layer. Etching is needed to remove the process deterioration layer. However, nitride semiconductors are chemically inert and do not have the proper corrosion solution. Potassium hydroxide and phosphoric acid have been proposed as corrosion solutions for GaN, but the strength to corrode the Ga surface is weak. Dry etching using a halogen plasma is performed to remove the damaged layer. Ga shaving can be cut by halogen plasma. However, dry etching causes a problem of surface contamination by new metal particles. Therefore, wet etching is performed using HF + H 2 O 2 , H 2 SO 4 + H 2 O 2 , HCl + H 2 O 2 , HNO 3 , or the like having no selectivity, corrosiveness, and a redox potential of 1.2 V or more. |
| priorityDate | 2003-10-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.