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filingDate 2006-03-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2006-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20060086893-A
titleOfInvention Deposition device
abstract The cleaning method of the film-forming apparatus which concerns on this invention WHEREIN: The cleaning method for removing the titanium chloride adhered in the chamber for giving predetermined film-forming process to an object, WHEREIN: At least the site | part to be cleaned in a chamber is heated to 130 degreeC or more, By introducing a fluorine compound gas into the chamber as a cleaning gas in a state where the cleaning target site is set to 130 ° C or higher, at least the titanium chloride attached to the cleaning target site is converted into titanium fluoride, and the titanium fluoride is exhausted from the chamber. do.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100761757-B1
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Total number of triples: 34.