| abstract |
Provided is a method of manufacturing a semiconductor device having an insulating film having a sufficiently strong mechanical strength and a very low dielectric constant. Forming a porous first insulating film 38 on the semiconductor substrate, forming a second insulating film 40 having a higher density than the first insulating film, and forming a second insulating film on the first insulating film. In the state in which the insulating film exists, the process of irradiating an electron beam, an ultraviolet-ray, or a plasma, and hardening a 1st insulating film is included. Since the electron beam etc. are irradiated to the 1st insulating film through the 2nd insulating film with high density, a 1st insulating film can be hardened, preventing a big damage to a 1st insulating film. Since damage to the first insulating film can be prevented, increase in hygroscopicity and increase in density can be prevented, and further increase in relative dielectric constant can be prevented. Therefore, it is possible to provide a semiconductor device having an insulating film having a low dielectric constant and high mechanical strength.n n n n Mechanical strength, relative dielectric constant, insulating film, porous, hardening, compactness, hygroscopicity, density |