http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20060060963-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76856 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2855 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28088 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 2004-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ba07cecc623dc5ee00e4fbe93fbc8178 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7b6c616276cb95252d160179ade4af0e |
| publicationDate | 2006-06-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20060060963-A |
| titleOfInvention | Metal wiring formation method of semiconductor device |
| abstract | The present invention relates to a method for forming a metal wiring of a semiconductor device, by depositing a nitride film and an oxide film as an interlayer insulating film, and etching only the oxide film using the selectivity of the oxide film and the nitride film during via hole etching, and using N 2 plasma simultaneously with Ar sputtering By re-depositing the nitride film / WN layer on the via hole sidewall to suppress SOG out gasing, the wiring short circuit problem caused by SOG out gasing can be improved. In addition, since the WN layer to be re-deposited is used as the seed layer of the tungsten plug, a separate process for forming the seed layer may not be performed, thereby simplifying the process. n n n n Metal wiring, SOG out-gassing, barrier metal film |
| priorityDate | 2004-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.