| abstract |
In subsequent deposition, in particular gate dielectric deposition fabrication by atomic layer deposition (ALD), methods of treating germanium surface 200 are provided. Prior to deposition, the germanium surface 200 is treated with a plasma product or by thermal reaction with gaseous reactants. Examples of surface treatments leave oxygen crosslinking, nitrogen crosslinking, -OH, -NH and / or -NH 2 finishes to more readily absorb ALD reactants. Surface treatment prevents deep penetration of reactants into the germanium bulk, while facilitating nucleation. |