| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-0225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-3151
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-80 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32357
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32623
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32422
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32651
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32871
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-80 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate |
2005-04-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_82028d8f6dc7e27b55c168e1b34b30d2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d73fddeb26fc0eb13bbd594190fec5ec
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d1e95f74d679bcc561c81797fbe9b85a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d56b50e4122483faad0fc8a5ac3189fc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d5e9102a099ce79ed6ad0077b47a6456 |
| publicationDate |
2006-05-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20060045765-A |
| titleOfInvention |
Photomask Plasma Etching Method and Apparatus |
| abstract |
The present invention provides a method and apparatus for photomask etching. In one embodiment, the photomask etching method includes providing a processing chamber having a substrate support pedestal that receives a photomask substrate thereon. An ion-radical shield is disposed on the pedestal. The substrate is located on a pedestal below the ion-radical shield. Process gas is injected into the process chamber and plasma is formed from the process gas. The substrate is mainly etched radically through the shield. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8349128-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100859313-B1 |
| priorityDate |
2004-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |