http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20060028985-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-54 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45574 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-5096 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4586 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-505 |
| filingDate | 2004-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bd9fdaa8e841de7bed938617786c9884 |
| publicationDate | 2006-04-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20060028985-A |
| titleOfInvention | Chemical vapor deposition apparatus capable of depositing double barrier metal in situ and double barrier metal deposition method using the same |
| abstract | The present invention relates to a chemical vapor deposition apparatus and a barrier metal deposition method using the same, comprising: a chamber in which a predetermined process is performed; A shower head supplying a reaction gas and a carrier gas used in the predetermined process into the chamber; A stage heater disposed in the chamber so as to face the shower head up and down and provided with a driving device capable of providing a temperature suitable for the predetermined process and adjusting a distance from the shower head; A high frequency applying device for applying a high frequency to form a plasma in the chamber; And a gas supply line for supplying a reaction gas used for the predetermined process and a carrier gas suitable for the reaction gas to the chamber. With this structure, by adding a conventional nitrogen line for the reaction gas (TiCl 4) in a gas line of the Ti chamber can deposit a TiN immediately after Ti deposition without thermal loss, shower, Ti and TiN deposited by attaching a motor to the stage heater The distance between the head and the stage heater can be adjusted. Therefore, Ti / TiN barrier metal can be deposited in-situ in one chamber, thereby reducing thermal stress and process time and cost. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100744421-B1 |
| priorityDate | 2004-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.