http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20060023696-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-1368 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4908 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02252 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-136 |
| filingDate | 2004-09-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_34a0c2b8a577de52e428e178cf7091ea http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_87d8847cb70c01cd7a56b4df4f7e1abe http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f36e4923e590095798240e56e20cc0d6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c2e6bbc41e8154e964d610cdb83b0bbb |
| publicationDate | 2006-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20060023696-A |
| titleOfInvention | Thin film transistor array panel and manufacturing method thereof |
| abstract | The thin film transistor array panel according to the present invention includes an insulating substrate, a gate line formed on the insulating substrate, a gate insulating film formed on the insulating substrate and the gate line, an oxynitride film formed on the gate insulating film, a semiconductor layer formed on the oxynitride film, A data line formed on the gate insulating layer to be insulated from and intersecting with the gate line, a passivation layer formed on the data line and including a contact hole, and a pixel electrode formed on the passivation layer and electrically connected to a portion of the data line through the contact hole. It is preferable to include. Accordingly, the thin film transistor array panel according to the present invention forms an oxynitride film at the interface between the nitride film and the semiconductor, thereby lowering the interface trap density at the interface and improving the surface state, thereby improving the electrical characteristics of the thin film transistor.n n n n Thin film transistor display panel, oxynitride film |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9575348-B2 |
| priorityDate | 2004-09-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419579069 |
Total number of triples: 19.