| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B99-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-033
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-025
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-90
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0033 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242 |
| filingDate |
2004-09-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_43d6479c6f172c26827ee2546124d943
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ec8b49d1e0dcb00c9c4184320532fb5e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a79ec28601c4cce3345477226e5c0621 |
| publicationDate |
2006-03-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20060023064-A |
| titleOfInvention |
Semiconductor memory device with carbon nanotube and manufacturing method thereof |
| abstract |
Disclosed are a semiconductor memory device having carbon nanotubes and a method of manufacturing the semiconductor memory device. Carbon nanotubes are formed as lower electrodes by using plasma enhanced chemical vapor deposition or thermal chemical vapor deposition. In the formation of the lower electrode, catalyst metal particles are formed in the guide pattern for growing carbon nanotubes to induce the carbon nanotubes to be vertically aligned. In addition, a diffusion barrier layer may be formed on the carbon nanotubes in order to prevent diffusion of oxygen in the storage dielectric layer and to improve adhesion between the carbon nanotubes and the storage dielectric layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8138572-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100771546-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7998850-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7875920-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9646971-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100874912-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7799633-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101010115-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100791948-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101068295-B1 |
| priorityDate |
2004-09-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |