http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100874912-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S977-742 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41725 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S977-762 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S977-766 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-033 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-318 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-91 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0676 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0673 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0665 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04 |
| filingDate | 2006-12-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2008-12-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2008-12-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100874912-B1 |
| titleOfInvention | Semiconductor device and manufacturing method |
| abstract | The present invention relates to a semiconductor device and a method for manufacturing the semiconductor device, and more particularly to a semiconductor device using a carbon nanotube or nanowire as a lower electrode of the capacitor and a method for manufacturing the same. The semiconductor device of the present invention for achieving the above technical problem, the lower electrode having a plurality of tubes or wires on the semiconductor substrate; A dielectric film formed on the surface of the lower electrode; And an upper electrode formed on the surface of the dielectric layer, wherein each of the tubes or wires is disposed radially around a lower portion of the tubes or wires. According to the semiconductor device and the method of manufacturing the semiconductor device according to the present invention, the capacitor capacitance can be increased by maximizing the area of the lower electrode of the capacitor. |
| priorityDate | 2006-12-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 43.