| abstract |
The present invention provides a novel tungsten film CMP composition consisting of Fe-ADA or Fe-HEIDA complex, silica and hydrogen peroxide, and to improve its function as 1) a mixture of nitric acid and phosphoric acid, 2) aminoalcohol, 3) surfactant and 4 It relates to a tungsten film polishing CMP composition which may further include one or more components selected from anticorrosive.n n n The CMP composition according to the present invention has a high polishing rate, low etching rate, high selectivity, excellent polishing uniformity, high dispersion stability, high oxidant stability, high polishing selectivity, and oxide film erosion and W in a patterned wafer. It provides a novel CMP composition having a very excellent properties compared to the existing tungsten CMP slurry due to the low dishing of the wiring.n n n Tungsten Film, Chemical-Mechanical Polishing, CMP, Polishing Composition |