| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/F21Y2115-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S362-80
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B60Q2400-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/F21W2103-35 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B60Q1-2696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/F21S43-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/F21S45-49
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B60Q1-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B60Q1-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B60Q1-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/F21S43-19 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate |
2006-01-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_44d680c2b4b8c1c8d32a9ddccea2659c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aa68a84ee5b52025ad9af180e180a1b0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6f29feb982d4ca2ddb7553a29bf40efd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_337ac3960c5d1b702d80e0a60445617d |
| publicationDate |
2006-02-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20060013440-A |
| titleOfInvention |
Manufacturing method of semiconductor device |
| abstract |
A plasma processing apparatus and method are disclosed for treating a wafer edge that can be removed while non-selectively and precisely controlling the layers of material formed at the edge of the wafer. The plasma processing apparatus of the present invention is provided below the inside of a processing chamber capable of processing a wafer, and includes a lower electrode on which a wafer can be mounted on an upper surface thereof and side electrodes spaced apart along an outer wall of the lower electrode. The upper electrode may be formed to correspond to the lower electrode and the side electrode to form a plasma in an upper electrode provided in a cylindrical shape on an upper side of the processing chamber and an edge region of the wafer mounted on the lower electrode, And an RF source connected to at least one of the lower electrode and the side electrode. A cylindrical insulating plate is attached to the inside of the upper electrode, and includes at least an inclined downward portion so that the process gas passed between the insulating plate and the inner wall of the upper electrode is supplied outwardly to the edge of the wafer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100978754-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8138444-B2 |
| priorityDate |
2006-01-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |