http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20050118153-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2855 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28556 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76846 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76856 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate | 2005-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_95f59924471ebea296175ba4793fbb88 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f398b2fe2a7b52d9384bee106f1b9b75 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ab59f89faa5564521ddb2694f5f665c9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3269428b11f32536c8b59a530685f169 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a3bd710ef402641543f180c60ca7a2c1 |
| publicationDate | 2005-12-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20050118153-A |
| titleOfInvention | Fabricating method for interconnection line of semiconductor device |
| abstract | Provided is a method for forming metal wirings in a semiconductor device. In the method of forming a metal wiring of a semiconductor device, a conductive capping film is deposited and patterned on a metal film of a semiconductor substrate to form a lower wiring, an interlayer insulating film having a contact hole exposing the conductive capping film, and an upper surface and a contact of the interlayer insulating film. A conductive diffusion prevention and aluminum deposition induction film is formed in the hole, and H2 plasma is treated to H2 passivate the upper surface of the interlayer insulating film, and the interface between the conductive diffusion prevention film and / or the conductive capping film on the bottom of the contact hole is reduced. While depositing a film, the formation of an aluminum film on the H2 passivated interlayer insulating film formed by the H2 plasma treatment is suppressed, and is formed only in the contact hole, and the aluminum film is formed on the deposited aluminum film and the H2 passivated interlayer insulating film. Embedding the hole. |
| priorityDate | 2005-11-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.