| abstract |
Disclosed herein is a method of removing material from a substrate for application in the field of etching and / or cleaning. In one embodiment, at least one compound selected from the group consisting of halogen-containing compounds, boron-containing compounds, hydrogen-containing compounds, nitrogen-containing compounds, chelated compounds, carbon-containing compounds, chlorosilanes, hydrochlorosilanes or organochlorosilanes The dielectric constant is greater than silicon dioxide from the substrate by reacting the containing reactant with a material having a dielectric constant greater than that of silicon dioxide to form a volatile product and removing the material from the substrate by removing the volatile product from the substrate. Provides a method for removing material. |