http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20050050336-A

Outgoing Links

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_efd77c1983329ca444312479161a8c18
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76856
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76861
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
filingDate 2003-11-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_99ca7ae10f4ba792cbe7ae2099407b2d
publicationDate 2005-05-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20050050336-A
titleOfInvention Method for fabricating barrier metal of semiconductor device
abstract The present invention relates to a method of forming a barrier metal layer of a semiconductor device capable of minimizing resistance and uniform densification of the metal layer in forming a metal layer using a MOCVD process.n n n A method of forming a barrier metal layer of a semiconductor device according to the present invention includes the steps of forming an interlayer insulating film having a contact hole on a semiconductor substrate; and forming a first barrier metal layer on an entire upper surface of the interlayer insulating film including the contact hole; Using a metal organic chemical vapor deposition process to deposit a thin film metal layer having a thickness of 5 ~ 70Å on the first barrier metal layer, and performing a unit thin film metal layer forming process of plasma treatment on the deposited thin film metal layer; And repeating the unit thin film metal layer forming process to form a barrier metal layer composed of a plurality of thin film metal layers.
priorityDate 2003-11-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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Total number of triples: 19.