http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20050034381-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3212 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7684 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09G1-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-321 |
| filingDate | 2003-10-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ac2291561c8fdce65aba93cbe134e729 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a2905c27ff866b123a52dc8cb211382c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0bb4a138feff347c31e4705990b45a4e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7d2b24fd8ef4acc083fe4d0e0ec1e0f7 |
| publicationDate | 2005-04-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20050034381-A |
| titleOfInvention | Chemical mechanical polishing(cmp) slurry for aluminum layer, cmp method using the cmp slurry and forming method for aluminum wiring using the cmp method |
| abstract | The slurry which can be used for the chemical mechanical polishing (CMP) process of an aluminum film, the CMP method using this slurry, and the formation method of the aluminum wiring using this method are disclosed. The slurry for aluminum film CMP according to an embodiment of the present invention includes colloidal silica as an abrasive, fruit water as an oxidant, nitric acid and / or potassium hydroxide as an additive for controlling pH, and polyethyleneimine as an inhibitor for removing an oxide film. In addition, the slurry for aluminum film CMP may further contain EDTA salt as a defect generation inhibitor. In addition, when using the CMP method according to an embodiment of the present invention, first, the aluminum film is polished in one step using a slurry containing no defect preventing agent, and then the remaining aluminum film using a slurry containing the defect preventing agent. The aluminum wiring is formed by polishing and removing the barrier metal layer. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100672940-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100697293-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7442646-B2 |
| priorityDate | 2003-10-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 68.