| abstract |
The present invention relates to a photoresist composition, using a photoresist polymer comprising a polymerizing repeating unit represented by the following formula (1) and a positive photoresist composition containing polyvinylphenol as a base resin, EUV (Extreme By using Ultraviolet) as an exposure source, excellent etching resistance can be ensured even when the photoresist film is thin when forming a photoresist pattern of 50 nm or less.n n n [Formula 1]n n n n n n n n Wherein R 1 , R 2 , R 3 , R 4 , R 5 , a, b and c are as defined in the specification. |