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filingDate 2004-09-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3c227385de57a4cdfddedb2fc25019f1
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publicationDate 2005-03-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20050024620-A
titleOfInvention Sulfonamide compound, polymer compound, resist materials and pattern formation method
abstract The present invention provides a resist material having excellent transmittance to exposure light having a wavelength of 300 nm or less and excellent substrate adhesion and developability.n n n The base resin of a resist material consists of a unit represented by General formula (3).n n n n n n n n n n Provided that R 1 , R 2, and R 3 are the same or different, and are a hydrogen atom, a fluorine atom, a C1 or more linear alkyl group having 20 or less, a branched or cyclic alkyl group, or a fluorinated alkyl group, and R 4 is , A linear alkylene group having 0 to 20 carbon atoms or a branched or cyclic alkylene group, R 5 and R 6 are the same or different, and are a hydrogen atom, a linear alkyl group having 1 to 20 carbon atoms, and a branch. Or a protecting group which is released by an cyclic or cyclic alkyl group, a fluorinated alkyl group, or an acid.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8741537-B2
priorityDate 2003-09-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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