http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20050007700-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_efd77c1983329ca444312479161a8c18 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76856 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76846 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate | 2003-07-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1fb6c97d761548fe6bfc5e15667cd5b7 |
| publicationDate | 2005-01-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20050007700-A |
| titleOfInvention | Semiconductor device and formation method of metal line in the semiconductor device |
| abstract | The present invention relates to a method for forming a metal wiring layer of a semiconductor device, and an object thereof is to fill a contact hole or a via hole with a metal material without voids, to densify the barrier metal film, to improve barrier properties, and to reduce via resistance. To this end, in the present invention, after forming the Ti film as the first barrier metal film on the inner wall of the via hole or the contact hole, plasma is generated in a nitrogen atmosphere to nitride the surface of the Ti film. That is, the method for forming a metal wiring layer of a semiconductor device according to the present invention comprises: forming an interlayer insulating film on a structure of a semiconductor substrate on which individual elements and a lower metal wiring layer are formed; Selectively etching the interlayer insulating film to form a via hole exposing a predetermined region of the lower metal wiring layer; Forming a barrier metal film on an inner wall of the via hole; Plasma treating the barrier metal film; And forming a metal plug on the barrier metal film to form a metal plug to fill the via hole. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100779337-B1 |
| priorityDate | 2003-07-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.