| abstract |
A high dielectric film forming method by atomic layer deposition and a method of manufacturing a capacitor having the high dielectric film are disclosed. The high dielectric film forming method according to the present invention is a method of forming a dielectric film having a high dielectric constant by using an atomic layer deposition method, comprising: purging after supplying a precursor containing a metal component, and purging after supplying an oxidant; And purging after supplying a reaction source comprising a nitrogen component. |