| abstract |
The present invention provides copper (Cu) (or copper alloy) / aluminum (Al) (aluminum alloy), copper, which is a material of metal wiring for gate electrode, source electrode, and drain electrode, which constitute a TFT (Thin Film Transistor) of a liquid crystal display device. The etching liquid composition which collectively etches a laminated film of (Cu) / titanium (Ti) (titanium alloy) of copper (Cu) / tantalum (Ta) (tantalum alloy) or a multilayer film containing the same, The etching liquid which concerns on this invention. The main composition of hydrogen peroxide (H 2 O 2 ) and phosphate (A X H Y PO 4 ), and F-ion ion, the etchant according to the present invention containing hydrogen peroxide (H 2 0 2 ) + phosphoric acid (phosphate) + F It is a mixture of -ion + organic acid (containing -COOH) + copper reaction inhibitor + fruit tree stabilizer + additives for improving etching characteristics. This mixture is hydrogen peroxide (4-40%), phosphate (0.5-10%), organic acid (0.5-10%), copper reaction inhibitor (4-methyl imidazole, 0.2-1.5%), fruit tree Stabilizer (1%), an additive (1%) is characterized in that the mixed solution.n n n The above-mentioned etchant has the advantage of simplifying the process by collectively etching the double metal layer containing copper as described above, and by using copper having low resistance as a wiring material, the image quality of the liquid crystal panel is further improved. The advantage is that a large area liquid crystal panel can be manufactured. |