| abstract |
The present invention relates to a method of forming a low dielectric constant insulating film. The structure comprises the steps of (a) forming an insulating film containing Si—CH 3 bonds in the skeleton structure of Si—O—Si on the substrate, and (b) irradiating the insulating film with ultraviolet light in a reduced pressure atmosphere, And a step of desorbing the CH 3 group from the CH 3 bond, and (c) discharging the desorbed CH 3 group from the insulating film. |