| abstract |
The present invention provides a cleaning liquid which can completely remove the etching residue on the semiconductor substrate in a short time, and does not oxidize or corrode the copper wiring material, the insulating film material, or the like, and is less burdensome in terms of safety and environment.n n n (1) A cleaning liquid for a semiconductor gas containing an oxidizing agent, an acid and a fluorine compound, and having a concentration of water adjusted to a pH of 3 to 10 by adding a basic compound to 80 wt% or more, (2) an oxidizing agent, an acid, a fluorine A cleaning liquid for a semiconductor gas containing a compound and a corrosion inhibitor, wherein the concentration of water adjusted to pH 3 to 10 by adding a basic compound is 80% by weight or more, and a metal wiring, wherein the cleaning liquid is used. A method of cleaning a semiconductor substrate. |