http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20040073775-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76837 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 |
| filingDate | 2003-02-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b66cdf73fa8a8389279d834e69855ada http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a7785db2231dc2cc5e2768c514d2ddea |
| publicationDate | 2004-08-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20040073775-A |
| titleOfInvention | method of forming dielectric layer in semiconductor device |
| abstract | A method of forming an HDP insulating film for insulating wirings having a high aspect ratio is disclosed. The method forms a first insulating film having a flat surface covering the patterns by providing a substrate on which the patterns are formed and then depositing a first insulating material on the substrate. Subsequently, an etch back process is performed on the first insulating layer to form a first insulating layer pattern in which the voids are opened. And depositing a second insulating material on the first insulating film pattern to bury the open voids and form a second insulating film covering the first insulating film pattern and the patterns. Therefore, the insulating film formed by the above method may form an insulating film not containing voids only by changing the deposition process conditions and the etching process. |
| priorityDate | 2003-02-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID16212546 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419520437 |
Total number of triples: 16.