| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_54d600ecc035c6e5261c9690dd1d6a67
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38e4b503b1979a5d277324483132316a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3122 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02216
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-401
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31612 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-511
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40 |
| filingDate |
2004-06-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b7e42197157a69810caa65dbc34ea8cf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_44f1611f4ab75e5bc7e86a2519d88c10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_569ecf9cc532dd8290965ccaeea74b61
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4a74f5cfb202f68ee3ff05d77a9255ec
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_68cd6ef6e7e993d0a65532aff4ba8a8b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_578146298bb8c428dca3902b2991902f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bf1d1b68de8f5c4fe9b3cc2aaf170356
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d6b7217744d3ea65d2eb5d048f0ae1ec |
| publicationDate |
2004-07-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20040065193-A |
| titleOfInvention |
Film forming method, semiconductor device and manufacturing method of the same |
| abstract |
The present invention relates to a film forming method for forming an insulating film having a low dielectric constant. The constitution is performed by plasma-forming and reacting the film forming gas formed by adding at least one of dilution inert gas and nitrogen gas (N 2 ) to the main film forming gas component consisting of siloxane and N 2 O. An insulating film 22 is formed over the 21. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101393695-B1 |
| priorityDate |
2000-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |