| abstract |
The present invention relates to a magnetron sputter reactor for sputtering deposition materials such as tantalum, tantalum nitride and copper, in which self ionizing plasma (SIP) sputtering and inductively coupled plasma (ICP) sputtering are used together or alternately in the same chamber and a method of using the same. It is about. In addition, the bottom coverage can be thinned or removed by ICP resputtering. SIP is performed by small magnetrons with unequal magnetic strength and high power poles applied to the target during sputtering. ICP is provided by one or more RF coils that inductively couple RF energy to the plasma. The combined SIP-ICP layers can act as a liner or barrier or seed or nucleation layer for the hole. In addition, the RF coil may be sputtered to provide a protective material during ICP resputtering. |