http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20040033309-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76838 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23G5-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23G5-00 |
| filingDate | 2002-09-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2004-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20040033309-A |
| titleOfInvention | Method of plasma treatment |
| abstract | The present invention is a process for accommodating a substrate having a metal or metal compound film formed on its surface in a processing container, supplying rare gas and H 2 gas into the processing container, and supplying the rare gas and H 2 gas during the process. And a step of generating a plasma in the processing container to remove the native oxide film formed on the film surface of the metal or metal compound by the plasma. According to the present invention, since the plasma is generated in the processing container while supplying the rare gas and the H 2 gas into the processing container, the plasma is acted on the natural oxide film formed on the film surface of the metal or metal compound. At the same time, active species of the rare gas etch the native oxide film. As a result, the natural oxide film can be removed at a sufficient selectivity. |
| priorityDate | 2001-09-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 18.