| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f50f95c17e4934fb9f9810574cdf87aa |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76832
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76835
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7684
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-022
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02216
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31633
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3212
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-56 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-321
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 |
| filingDate |
2003-09-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_71b27cb90f7c7ad88b2063dca571646d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1715b360be57193df1e2d47cf9cd927a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b4a44f4441b172daebd10fba45847980 |
| publicationDate |
2004-03-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20040023557-A |
| titleOfInvention |
Interlayer Insulation Film Used For Multilayer interconnect of Semiconductor Intergrated Circuit And Method Of Manufacturing The Same |
| abstract |
An interlayer insulating film used for the multilayer interconnection of a semiconductor integrated circuit according to the present invention comprises: forming a first insulating film on a substrate by plasma CVD using a silicon-containing hydrocarbon gas; It is formed by continuously forming the second insulating film on the first insulating film at a thickness less than the first insulating film in situ by plasma CVD using a silicon-containing hydrocarbon gas and an oxidizing gas. The second insulating film has a strength of 6 GPa or more and is used as the polishing stop layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20220133835-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100648632-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20150037638-A |
| priorityDate |
2002-09-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |