| Predicate |
Object |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31138
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C03C15-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B44C1-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F1-00 |
| filingDate |
2002-01-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2003-12-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20030093205-A |
| titleOfInvention |
Use of ammonia for etching organic low-k dielectrics |
| abstract |
The present invention introduces a process of using ammonia NH 3 as an active etchant to etch features in a wafer comprising organic low dielectric constant materials. In this process, the etching rate is more than twice as fast as the conventional N 2 / H 2 process. This difference is due to the significantly lower ionization potential of NH 3 to N 2 in the process, which results in high plasma density and high etchant concentration under similar process conditions. |
| priorityDate |
2001-02-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |