http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20030081052-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76813 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31138 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7681 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
| filingDate | 2003-04-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2003-10-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20030081052-A |
| titleOfInvention | Method for manufacturing semiconductor device |
| abstract | A film containing a low dielectric constant MSQ is used as an interlayer insulating film, an opening is provided in the MSQ by using a resist as a mask, and the resist is ashed in the state where the MSQ is exposed. The ashing conditions in this case are set to low temperature (-20 ° C to 60 ° C) and low pressure (5 to 200 mTorr), and RF supply is performed in the order of bias power and power source power. In this way, CH 3 groups, which determine the low dielectric constant of MSQ, can remain in the film. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100857989-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100807026-B1 |
| priorityDate | 2002-04-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419523291 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID458393636 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID977 |
Total number of triples: 20.