http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20030057068-A

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publicationDate 2003-07-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20030057068-A
titleOfInvention Slurry For Polishing Metal Lines
abstract BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a polishing slurry composition used in a chemical mechanical polishing / planarization (CMP) process for the purpose of planarization of wafers in the manufacture of semiconductor devices, and more particularly, to fine metal oxide powders, silver compounds, and poly ( Acrylic acid), nitric acid, ammonia water and deionized water comprising a slurry composition for polishing the metal wire, using the polishing slurry composition of the present invention, it is possible to compensate the problems of erosion and dishing occurs during polishing.
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