abstract |
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a polishing slurry composition used in a chemical mechanical polishing / planarization (CMP) process for the purpose of planarization of wafers in the manufacture of semiconductor devices, and more particularly, to fine metal oxide powders, silver compounds, and poly ( Acrylic acid), nitric acid, ammonia water and deionized water comprising a slurry composition for polishing the metal wire, using the polishing slurry composition of the present invention, it is possible to compensate the problems of erosion and dishing occurs during polishing. |