http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100856542-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3212 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K3-1409 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 |
| filingDate | 2006-09-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2008-09-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2008-09-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100856542-B1 |
| titleOfInvention | Copper chemical mechanical polishing process slurry and copper wiring formation method using the same |
| abstract | Slurry for inhibiting oxidation or preventing diffusion which increases resistance of copper exposed to air or water after chemical mechanical polishing (CMP) process used for planarization during copper wiring forming process and copper wiring using the same A formation method is disclosed. The main feature of the present invention is that the main component of the slurry is composed of a solvent, an abrasive, an oxidizing agent, a corrosion inhibitor, and a complex forming agent, and further includes a silver compound to prevent oxidation or diffusion of copper. When the copper CMP process is performed using this slurry, the copper surface is replaced with silver, and the resistance to oxidation is increased, thereby suppressing the increase of the sheet resistance of copper in an oxidizing atmosphere, and forming a metal wiring having low specific resistance and high reliability. can do.n n n n Copper, Wiring, CMP, Chemical, Mechanical, Polishing, Silver Compound, Oxidation, Diffusion, Barrier |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20200077877-A |
| priorityDate | 2006-09-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 109.