http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20030056891-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823864 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823814 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823835 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-092 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092 |
| filingDate | 2001-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_139f04f217d1caf8d08460c817c2fc87 |
| publicationDate | 2003-07-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20030056891-A |
| titleOfInvention | Method for fabricating semiconductor device |
| abstract | The present invention relates to a method of manufacturing a semiconductor device, the method of manufacturing a semiconductor device according to the present invention comprises the steps of forming an isolation film in the semiconductor substrate defining an active region and an inactive region; Forming a gate oxide film and a gate on an active region of the semiconductor substrate; Forming a low pressure silicon oxide film on an upper surface of the entire structure including the gate; Nitrogen annealing the low pressure silicon oxide film; Forming a nitride film on the upper surface of the entire structure including the low pressure silicon oxide film and selectively removing the nitride film to form a spacer on the gate side wall; Forming a source and a drain in the semiconductor substrate on both sides of the spacer; Forming a self-aligned silicide film on the source and drain; And forming a silicon nitride film on an upper surface of the entire structure including the self-aligned silicide film. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101133518-B1 |
| priorityDate | 2001-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.