http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20030024717-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31138 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-427 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-42 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
| filingDate | 2001-06-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2003-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20030024717-A |
| titleOfInvention | Post etch photoresist strip with hydrogen for organosilicate glass low-k etch applictions |
| abstract | The present invention relates to a method of peeling photoresist from a semiconductor wafer comprising an organosilicate dielectric layer. The method introduces a hydrogen containing gas stream into the wafer and uses the hydrogen containing gas to form a plasma in proximity to at least a portion of the wafer. The plasma is used to peel at least a portion of the photoresist from the wafer. If the step of peeling the photoresist out of the semiconductor wafer is performed subsequent to the etching step performed on the wafer in the etching apparatus, the present invention can in turn perform peeling of the photoresist in the etching apparatus in turn. According to the surprising results of the present invention, a high peeling treatment rate is possible with high concentration of hydrogen gas, and this very high concentration of hydrogen gas mixture can be safely used. |
| priorityDate | 2000-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.