| abstract |
The present invention relates to a siloxane-based resin and a method for forming a semiconductor interlayer insulating film using the same, and more particularly, a cyclic compound and a silane compound having four reactive groups, or a silane compound and / or K having one or more reactive groups therein. A siloxane based resin prepared by adding a topographic siloxane compound to hydrolysis and condensation polymerization in the presence of a catalyst and water in an organic solvent, and a method for forming a semiconductor interlayer insulating film, wherein the resin is used as a low dielectric insulating film for semiconductors. By using the siloxane resin of the present invention, it is possible to easily form an insulating film having excellent mechanical properties and thermal stability and having a low dielectric constant when manufacturing a highly integrated semiconductor. |