| abstract |
The present invention relates to a novel polymer represented by the following formula (1), an acid generator, and a chemically amplified resist composition comprising a few additives and a solvent added thereto.n n n ----- (I)n n n Wherein R 1 is an alkyl group having 1 to 30 carbon atoms, R 2 is a hydrogen atom or an alkyl group having 1 to 30 carbon atoms, R 3 and R 4 are independently hydrogen and methyl groups, and X is a vinyl ether derivative or It is a styrene derivative, and l, m, and n represent the repeating unit of a polymer, l is 0.05-0.9, m is 0.1-0.7, n is 0-0.7.n n n The resist composition comprising such a polymer is a chemically amplified resist which is sensitive to far ultraviolet rays represented by KrF excimer laser or ArF excimer laser, and has little dependence on the substrate and excellent adhesion, and excellent transparency in the wavelength range. It is possible to form a resist pattern having excellent dry etching resistance, excellent sensitivity, resolution, and developability, and to increase etching resistance by incorporating a saturated aliphatic ring in the polymer to the maximum, and introducing an alkoxyalkyl acrylate monomer. It can solve the disadvantage that the pattern edge is uneven (edge roughness). |