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filingDate 2000-07-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2002-09-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20020070255-A
titleOfInvention Multiple stage cleaning for plasma etching chambers
abstract Etching the multilayers (22, 24) on the substrate (25) in the etching chamber (30) and cleaning the multilayer etchant residues formed on the surfaces of the walls (45) and components of the etching chamber (30). In the multiple etching step, a process gas with an etchant gas of different composition is used to etch the layers on the substrate 25 to deposit compositionally different etchant residues inside the chamber 30. In one cleaning step, a first cleaning gas is added to the process gas to clean the first residue or to inhibit deposition of the first residue onto the chamber surface. In a second cleaning step, residues of another composition are removed from the chamber surface using the second cleaning gas composition. This process is particularly advantageous for etching metal silicides 22 or polysilicon 24 using chlorine or bromine chemistry, whereby fluorides such as CF 4 , NF 3 or SF 6 are used as the first cleaning gas. Is added and oxygen is used as the second cleaning gas.
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priorityDate 1999-07-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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