| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5547f741b25666fc4ae5195cf71a979b |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-312
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3122
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3127 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-022
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31138
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76832
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02118 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
| filingDate |
2002-02-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7fb4dba70f22aad6717378600b3708c0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3e9014cc8c04e2e73f9f4f0c9f21532e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4901c9c0e18eb8f9f0c4805be4e7da48
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_02bc17991889985479ab8cf2a397b46a |
| publicationDate |
2002-08-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20020068958-A |
| titleOfInvention |
Method of Manufacturing a Semiconductor Device and the Semiconductor Device |
| abstract |
The present invention is to provide a technique for etching a plurality of organic films with a high selectivity ratio.n n n The method for manufacturing a semiconductor device of the present invention is a method for manufacturing a semiconductor device comprising the step of forming a silicon non-containing organic film (35) by using a mixed gas plasma of nitrogen and hydrogen for a composite film composed of a silicon- 35) is etched. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100788074-B1 |
| priorityDate |
2001-02-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |