http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20020062367-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32477 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4404 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32862 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate | 2000-12-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2002-07-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20020062367-A |
| titleOfInvention | Method of cleaning and conditioning plasma reaction chamber |
| abstract | A method of cleaning and adjusting the inner surface of a plasma reaction chamber in which a predetermined process is performed on a substrate such as a silicon wafer is disclosed. The method includes cleaning the chamber, such as wet cleaning or in-situ plasma cleaning, introducing a control gas into the chamber, energizing the control gas into a plasma state, and polymerizing the inner surface. Depositing a coating and processing the substrate. The above adjusting step may be performed without a substrate such as a wafer in the chamber, and the above processing step may be performed without operating the adjusting wafer across the chamber prior to processing the production wafer. In the case of a plasma chamber used for etching aluminum, the control gas may include a gas containing fluorine, a gas containing carbon, and a gas containing chlorine. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20160038783-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101289795-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100731124-B1 |
| priorityDate | 1999-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.