http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20020060957-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
| filingDate | 2001-08-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2002-07-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20020060957-A |
| titleOfInvention | Method of etching carbon-containing silicon oxide films |
| abstract | Described is a method of plasma etching a carbon-containing silicon oxide film that provides excellent etch profile control, a high etch selectivity of the carbon-containing silicon oxide film preferred for the fast etch rate of the carbon-containing silicon oxide film, and the covered photoresist masking material . According to the method used, the higher the carbon content in the carbon / containing silicon oxide film, the higher the etching rate until at least the atomic content is 20% carbon. In particular, the carbon-containing silicon oxide film has a high etching rate until at least an atomic content thereof is 20% carbon. Specifically, the carbon-containing silicon oxide film is plasma-etched using a plasma generated from a source gas containing NH 3 and C x F y . It is necessary to maintain a proper balance of the relative amounts of NH 3 and C x F y in the plasma source gas in order to provide a balance between etching the deposition of the by-product polymer and the removal of the etched substrate at various surface yarns Do. NH 3 operates to clean up the deposited polymer on the resist surface, the etched surface, and the process chamber surface. The atomic ratio of carbon to nitrogen in the plasma source is typically in the range of about 0.3: 1 to about 3: 1. We have found that C 2 F 6 and C 4 F 8 provide excellent etch rates while etching carbon-containing silicon oxide films. |
| priorityDate | 2000-08-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.