http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20020041447-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
| filingDate | 2000-09-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2002-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20020041447-A |
| titleOfInvention | Techniques for improving etching in a plasma processing chamber |
| abstract | An improved method and apparatus for a chemically supported etching process in a plasma processing system is disclosed. According to one aspect of the present invention, an improved method suitable for performing an etching process in a plasma treatment can be realized. The present invention works to reduce the threshold magnitude bias associated with the etching process. Lower threshold magnitude bias offers many advantages. One of these advantages is that shapes with higher aspect ratios can be etched accurately. In addition, some other undesirable effects such as micro loading, bowing and passivation can be reduced using the techniques of the present invention. |
| priorityDate | 1999-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 20.