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filingDate 2000-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2001-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20010112271-A
titleOfInvention Iridium etching methods for anisotrophic profile
abstract A method of etching an electrode layer disposed on a substrate to produce a semiconductor device comprising a plurality of electrodes separated at intervals of about 0.3 μm or less and having a profile of about 85 ° or more. The method comprises heating a substrate to a temperature of about 150 ° C. or higher and a high density inductively coupled plasma of an etching gas comprising oxygen and / or chlorine, argon and a gas selected from the group consisting of BCl 3 , HBr, HCl and mixtures thereof. And etching the electrode layer. The semiconductor device includes a substrate and a plurality of electrodes supported by the substrate. The electrodes have a size (eg, width) of about 0.3 μm or less and a profile of about 85 ° or more.
priorityDate 1999-02-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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