| abstract |
The present invention provides a compact semiconductor device that is excellent in downflow, temperature cycle characteristics, and PCT resistance, with high density packing, densification, and speedup of processing.n n n The semiconductor device of the present invention has at least one stress buffer layer on a semiconductor element on which electrode pads are formed, has a conductor on the stress buffer layer, and an electrode pad through a through hole penetrating through the stress buffer layer between the electrode pad and the conductor. And a conductor for conducting the conductor, an external electrode on the conductor, a stress buffer layer other than the region in which the external electrode exists, and a conductor protective layer on the conductor, wherein the stress buffer layer is a solid epoxy resin and a carboxyl group at 25 ° C. Cross-linked acrylonitrile butadiene rubber having |