http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20010081936-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ed62b7551998e54b35784cdbbb2778d5 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4583 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0214 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3145 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02219 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3185 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-345 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-469 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-458 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314 |
| filingDate | 2000-09-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9a65bd8b18dacb552686eaca28c3a051 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_50a8f58ed3604d6878d41dd7e56e6289 |
| publicationDate | 2001-08-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20010081936-A |
| titleOfInvention | Method for manufacturing a semiconductor device and apparatus for manufacturing a semiconductor |
| abstract | A film of a film formed when a silicon nitride film is formed by using biscial butyl aminosilin (BTBAS) and NH 3 as a source gas, or when a silicon oxynitride film is formed by using BTBAS, NH 3 and N 2 O as a source gas. Improves substrate in-plane uniformity of thickness.n n n BTBAS and NH 3 are flowed into the inner tube 12 as a raw material gas in the quartz inner tube 12 for stacking and accommodating a plurality of semiconductor wafers 16, and the silicon nitride is deposited on the semiconductor wafer 16 by the thermal CVD method. When forming a film, or when a silicon oxynitride film is formed on a semiconductor wafer 16 by thermal CVD by flowing BTBAS, NH 3, and N 2 O as a source gas into the inner tube 12, an adjacent semiconductor is formed. The distance a between the wafers 16 and the distance b between the end of the semiconductor wafer 16 and the inner wall of the quartz inner tube 12 are formed almost equally. |
| priorityDate | 2000-02-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 36.