http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20010080689-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32137 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 |
| filingDate | 1999-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2001-08-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20010080689-A |
| titleOfInvention | Plasma etching of polysilicon using fluorinated gas mixtures |
| abstract | A method of etching polysilicon using fluorinated gas chemistries to provide etch rates in excess of 10,000 kPa / min and photoresist selectivity better than 3: 1. The process is, for example, 50 to 60 sccm SF 6 with a total chamber pressure of 4 to 60 mTorr, fluorocarbons such as 1 to 40 sccm CHF 3 and 40 to 50 sccm O 2. The combination of fluorinated gas and fluorocarbon gas is used. The power applied to the etching chemicals that produce the etching plasma is 400-1500 watts of inductive source power (13.56 MHz) through the inductively coupled antenna and within the wafer support 200-1500 watts cathode bias power (12.56 MHz) applied through the cathode electrode. The support for supporting the wafer is maintained at 0-50 ° C. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11257678-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20200122984-A |
| priorityDate | 1998-12-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.