| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B24B37-20 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31051
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02065 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 |
| filingDate |
1999-12-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eb5b65d188602eae022a93eeecbd25f6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_91e294aa4fdb14096e02bb94086a2802 |
| publicationDate |
2001-07-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20010064398-A |
| titleOfInvention |
Chemical mechanical polishing method |
| abstract |
The present invention discloses a chemical mechanical polishing method. According to the disclosed invention, before the wafer is introduced into the polishing apparatus equipped with the polishing pad, the polishing pad whose hardness is high in the atmospheric state is rinsed with a high pressure hardness modifier to lower the hardness of the polishing pad. Then, the interlayer insulating film formed on the wafer is polished using the slurry with a polishing pad having a lower hardness. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109794845-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11682552-B2 |
| priorityDate |
1999-12-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |